Description
Subwavelength-scale semiconductor nanolasers have received wide attention recently for their applications in optical interconnect, bio/chemical sensing, data storage and imaging. We are particularly interested in using nanolasers to reduce the energy consumption in on-chip interconnect. Though many optical sources have been demonstrated on Si, most of them are significantly larger than transistors, making them unattractive for integration with electronic circuits. At Berkeley, we have been developing near-infrared (1.3–1.55 um) semiconductor nanolasers with all three dimensions smaller than a wavelength. Using a nanopatch metalodielectric cavity, we observe lasing in the two most fundamental optical modes. To further reduce the optical mode volume, we have successfully demonstrated a plasmonic crystal laser. Experimental results will be presented.
Abstract: The physical limit for the number of pixels per color channel per frame in an optical imager is approximately equal to the aperture area in square microns. While this limit is essentially achieved in megapixel scale cell phone cameras, the limit of 100 megapixels for cm apertures, 10...
Published 10/18/12
Abstract:
The fate of an ultrashort laser pulse propagating in air depends crucially upon its peak power. Below a critical value, Pcr, group velocity dispersion and beam diffraction combine to rapidly reduce the pulse intensity. On the other hand, if P is less than Pcr, a completely different...
Published 10/18/12
Abstract: Organic semiconductor materials offer the potential of low-cost and flexible displays and lighting solutions, some of which have already made it to the marketplace. Despite this, much of the underlying optical physics remains poorly understood and hinders progress towards better and...
Published 10/18/12