SiC: Silicon carbide device technologies with Christian Strenger
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Who needs diamonds, when you have silicon carbide? In our latest episode, Christian explains what SiC and diamonds have in common and how new device technologies are pushing SiC designs even further.
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In this episode, we talk to Konrad Schraml and Caspar Leendertz again about their nomination for the Deutsche Zukunftspreis. Listen to learn about the technical challenges the team from Infineon and TU Chemnitz overcame to create the world's first 3.3 kV SiC MOSFET with a vertical channel and...
Published 11/18/24
Published 11/18/24
We’ve been nominated for the prestigious Deutsche Zukunftspreis, the German Federal President‘s Award for Technology and Innovation! In this episode, we talk to Konrad Schraml and Caspar Leendertz about their submission: the world's first 3.3 kV SiC MOSFET with a vertical channel and innovative...
Published 11/05/24
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