IGBT7: It’s time to switch with Blaž Rohseano
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Description
Insulated-gate bipolar transistors (IGBTs) have been around for decades, but the 7th generation finally brings a much-awaited revolution. Our expert Blaž explains what the new IGBT7 technology means for silicon-based designs and what five “values” make it unique.
More Episodes
In this episode, we talk to Konrad Schraml and Caspar Leendertz again about their nomination for the Deutsche Zukunftspreis. Listen to learn about the technical challenges the team from Infineon and TU Chemnitz overcame to create the world's first 3.3 kV SiC MOSFET with a vertical channel and...
Published 11/18/24
Published 11/18/24
We’ve been nominated for the prestigious Deutsche Zukunftspreis, the German Federal President‘s Award for Technology and Innovation! In this episode, we talk to Konrad Schraml and Caspar Leendertz about their submission: the world's first 3.3 kV SiC MOSFET with a vertical channel and innovative...
Published 11/05/24
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