The power of efficiency: the sweet spot for Si, SiC, and GaN in data centers
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Description
How can we improve power conversion efficiency, especially at the AC-DC stage? In this fourth episode of our “We Power AI” podcast series, Gerald Deboy, Fellow and Head of the PSS Innovation Lab at Infineon, dives into the different stages of power conversion and explains why data centers should embrace a combination of Si, SiC and GaN semiconductors to support GenAI requirements.
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In this episode, we talk to Konrad Schraml and Caspar Leendertz again about their nomination for the Deutsche Zukunftspreis. Listen to learn about the technical challenges the team from Infineon and TU Chemnitz overcame to create the world's first 3.3 kV SiC MOSFET with a vertical channel and...
Published 11/18/24
Published 11/18/24
We’ve been nominated for the prestigious Deutsche Zukunftspreis, the German Federal President‘s Award for Technology and Innovation! In this episode, we talk to Konrad Schraml and Caspar Leendertz about their submission: the world's first 3.3 kV SiC MOSFET with a vertical channel and innovative...
Published 11/05/24